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Schematic illustration of transfer fabrication technique for: (a) inverted structure and (b) embedded structure.
Embedded structures obtained by transfer fabrication: (a) Cross-sectional SEM of an array of void boxes fabricated on silicon substrate, (b) cross-sectional SEM of multilayer void channels fabricated on a thin film on silicon substrate, and (c) cross-sectional SEM of an embedded nanostructure ( wide channels) fabricated on silicon substrate.
(a) SEM of a trapezoidal pattern made by soft molding on PUA film. (b) SEM of the inverted structure that was transferred to PEDOT-coated ITO. The inset shows the edge of the structure.
Current-voltage characteristics of reference light-emitting diode (LED) device (square) that was fabricated by the conventional shade mask method and those of the device fabricated by a cathode separator with transfer fabrication (cross). The left inset shows the pixels emitting green light that are separated by . The right inset is a SEM of the cathode separator. The arrow shows the edge of the deposited cathode metal, clearly revealing that no metal is present under the separator.
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