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Nitridation for high- films on Si by an annealing treatment
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View: Figures


Image of FIG. 1.
FIG. 1.

MEIS spectra of as-grown and annealed films at temperatures of 700, 800, and for . in an atmosphere. The solid line in the spectrum of the sample annealed at is the fitting data of the raw spectrum of the sample.

Image of FIG. 2.
FIG. 2.

XPS spectra of N , Si , and Hf for thick films at annealing temperatures from in an atmosphere.

Image of FIG. 3.
FIG. 3.

NEXAFS spectra of (a) edge features of as-grown and annealed films at temperatures from for in an atmosphere. (b) NEXAFS spectra of the edge corresponding to the annealed films. The inset is the high resolution spectrum of the sharp peak that appeared at the annealing temperature over .

Image of FIG. 4.
FIG. 4.

Changes in (a) MEIS and (b) XPS spectra with additional annealing in ambient at after the nitridation annealing at using . The solid lines in the MEIS data are the fitting results of the raw spectra.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nitridation for HfO2 high-k films on Si by an NH3 annealing treatment