1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Nitridation for high- films on Si by an annealing treatment
Rent:
Rent this article for
USD
10.1063/1.2202390
/content/aip/journal/apl/88/20/10.1063/1.2202390
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/20/10.1063/1.2202390
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

MEIS spectra of as-grown and annealed films at temperatures of 700, 800, and for . in an atmosphere. The solid line in the spectrum of the sample annealed at is the fitting data of the raw spectrum of the sample.

Image of FIG. 2.
FIG. 2.

XPS spectra of N , Si , and Hf for thick films at annealing temperatures from in an atmosphere.

Image of FIG. 3.
FIG. 3.

NEXAFS spectra of (a) edge features of as-grown and annealed films at temperatures from for in an atmosphere. (b) NEXAFS spectra of the edge corresponding to the annealed films. The inset is the high resolution spectrum of the sharp peak that appeared at the annealing temperature over .

Image of FIG. 4.
FIG. 4.

Changes in (a) MEIS and (b) XPS spectra with additional annealing in ambient at after the nitridation annealing at using . The solid lines in the MEIS data are the fitting results of the raw spectra.

Loading

Article metrics loading...

/content/aip/journal/apl/88/20/10.1063/1.2202390
2006-05-16
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nitridation for HfO2 high-k films on Si by an NH3 annealing treatment
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/20/10.1063/1.2202390
10.1063/1.2202390
SEARCH_EXPAND_ITEM