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Si:Er light emitting diode with memory function
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Current-voltage characteristics of the investigated diode structure as obtained at . The breakdown voltage is . In the inset, the layer sequence is schematically shown, with the Er-doped active layer positioned in the space-charge region.

Image of FIG. 2.
FIG. 2.

(Color online) Optical response (EL at , ) of the investigated structure and a schematic illustration of the bias voltage showing memory effect (a) for delay time of and (b) for the reverse-bias pulse applied directly after the exciting forward-bias pulse of saturating amplitude: (1) EL signal under forward bias and (2) SEL. The inset shows emission spectra of the investigated structure as measured in PL (at ) and EL under forward (at ) and reverse bias (at and ). Also SEL signal (at ) is shown.

Image of FIG. 3.
FIG. 3.

(Color online) SEL dependence on the magnitude of the reverse-bias “read” pulses: SEL is not observed below a threshold value. Pulse sequence 1–6 and EL response for sequences 1 (●), 2 (☉), 3 (◇), 4 (◻), 5 (▵), and 6 (☆). SEL is also not observed when the subthreshold “erase” pulse precedes the subthreshold reverse-bias pulse (trace 6). The inset shows the SEL intensity versus the subthreshold pulse duration .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: 1.54μm Si:Er light emitting diode with memory function