1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Band alignment at the interface
Rent:
Rent this article for
USD
10.1063/1.2204572
/content/aip/journal/apl/88/20/10.1063/1.2204572
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/20/10.1063/1.2204572
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Internal photoemission spectrum of for a bias. The arrows indicate the energy ( and ) of two direct optical transitions in silicon. The linear spectral dependence of is consistent with an emission of electrons from the semiconductor. (b) Internal photoemission spectrum for a bias. The linear spectral dependence of is consistent with an emission of electrons from the metal and holes from the semiconductor. In both panels the solid segments mark the linear fitting.

Image of FIG. 2.
FIG. 2.

(a) Photoconductivity spectrum for the stack for a bias. [(b) and (c)] Optical absorption coefficient for grown on quartz. (b) Direct absorption model. (c) Indirect absorption model. In all panels the solid segments mark the linear fitting.

Image of FIG. 3.
FIG. 3.

The experimental energy band diagram for -based MIS structures. The origin of the energy scale is placed at the top of the silicon valence band. The experimental error is .

Image of FIG. 4.
FIG. 4.

(Color online) Atomic structures of the simulated interfaces between and Si(001). Top: interface A. Middle: interface B. Bottom: interface C. Interface A differs from the other two by the orientation of the silicon crystal relative to that of the oxide. Interfaces B and C differ by the position of the oxygen atom binding to hafnium in the front of the figure.

Loading

Article metrics loading...

/content/aip/journal/apl/88/20/10.1063/1.2204572
2006-05-16
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Band alignment at the La2Hf2O7∕(001)Si interface
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/20/10.1063/1.2204572
10.1063/1.2204572
SEARCH_EXPAND_ITEM