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(a) Internal photoemission spectrum of for a bias. The arrows indicate the energy ( and ) of two direct optical transitions in silicon. The linear spectral dependence of is consistent with an emission of electrons from the semiconductor. (b) Internal photoemission spectrum for a bias. The linear spectral dependence of is consistent with an emission of electrons from the metal and holes from the semiconductor. In both panels the solid segments mark the linear fitting.
(a) Photoconductivity spectrum for the stack for a bias. [(b) and (c)] Optical absorption coefficient for grown on quartz. (b) Direct absorption model. (c) Indirect absorption model. In all panels the solid segments mark the linear fitting.
The experimental energy band diagram for -based MIS structures. The origin of the energy scale is placed at the top of the silicon valence band. The experimental error is .
(Color online) Atomic structures of the simulated interfaces between and Si(001). Top: interface A. Middle: interface B. Bottom: interface C. Interface A differs from the other two by the orientation of the silicon crystal relative to that of the oxide. Interfaces B and C differ by the position of the oxygen atom binding to hafnium in the front of the figure.
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