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Electrical observations of filamentary conductions for the resistive memory switching in NiO films
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10.1063/1.2204649
/content/aip/journal/apl/88/20/10.1063/1.2204649
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/20/10.1063/1.2204649
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Voltage-biased SET curve of memory switching with a current compliance of . The inset shows the memory switching curves by voltage-biased SET and RESET. (b) Current-biased SET curve of memory switching. is a threshold current required for transition to the stable state. All data are obtained from a sized cell.

Image of FIG. 2.
FIG. 2.

(a) Current-biased SET curves measured in a sized cell. The asterisks denote the intermediate resistance states between and states. (b) Memory switching curves with current-biased SET (unfilled data) and voltage-biased RESET (filled data). For SET1, the current sweep is stopped at and the voltage is swept for the RESET. For SET2 and SET3, the stop currents are and , respectively. Each stop current is denoted by a dotted line with index.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Cell size dependence of memory switching curves at room temperature. The filled data are the current-biased SET curves whereas the unfilled data are the voltage-biased RESET curves. The asterisks denote the intermediate resistance states, and the arrows denote the anomalous resistance fluctuations. (b) Memory switching curves plotted together. The dotted lines are guides for the eyes.

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/content/aip/journal/apl/88/20/10.1063/1.2204649
2006-05-15
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical observations of filamentary conductions for the resistive memory switching in NiO films
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/20/10.1063/1.2204649
10.1063/1.2204649
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