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The inverse grating decay time as a function of the grating period for HVPE- and MOCVD-grown samples. The determined values of bipolar diffusion coefficient and carrier lifetime are shown in the figure.
Comparison of the calculated curves (lines) and experimental data (points) of TRPL and FWM kinetics in the HVPE-grown freestanding thick layer (a) and in the standard thick MOCVD-grown GaN layer (b).
The calculated evolution of diffusion-governed carrier in-depth redistribution in thick GaN layers after photoexcitation by duration laser pulse at .
Numerical modeling of TRPL intensity and FWM diffraction efficiency decay for the different values of diffusion coefficients.
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