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Optical monitoring of nonequilibrium carrier lifetime in freestanding GaN by time-resolved four-wave mixing and photoluminescence techniques
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10.1063/1.2204651
/content/aip/journal/apl/88/20/10.1063/1.2204651
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/20/10.1063/1.2204651
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The inverse grating decay time as a function of the grating period for HVPE- and MOCVD-grown samples. The determined values of bipolar diffusion coefficient and carrier lifetime are shown in the figure.

Image of FIG. 2.
FIG. 2.

Comparison of the calculated curves (lines) and experimental data (points) of TRPL and FWM kinetics in the HVPE-grown freestanding thick layer (a) and in the standard thick MOCVD-grown GaN layer (b).

Image of FIG. 3.
FIG. 3.

The calculated evolution of diffusion-governed carrier in-depth redistribution in thick GaN layers after photoexcitation by duration laser pulse at .

Image of FIG. 4.
FIG. 4.

Numerical modeling of TRPL intensity and FWM diffraction efficiency decay for the different values of diffusion coefficients.

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/content/aip/journal/apl/88/20/10.1063/1.2204651
2006-05-18
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optical monitoring of nonequilibrium carrier lifetime in freestanding GaN by time-resolved four-wave mixing and photoluminescence techniques
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/20/10.1063/1.2204651
10.1063/1.2204651
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