1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
oa
Investigations of the characteristics of strain-free oxidation on InAlAs epilayer lattice matched to indium phosphide
Rent:
Rent this article for
Access full text Article
/content/aip/journal/apl/88/20/10.1063/1.2204654
1.
1.B. Koley, F. G. Johnson, O. King, S. S. Saini, and M. Dagenais, Appl. Phys. Lett. 75, 1264 (1999).
http://dx.doi.org/10.1063/1.124662
2.
2.Y. Ohiso, H. Okamoto, R. Iga, K. Kishi, K. Tateno, and C. Amano, IEEE Photon. Technol. Lett. 13, 918 (2001).
3.
3.I. Mito, M. Kitamura, K. Kobayashi, S. Murata, M. Seki, Y. Odagiri, H. Nishimoto, M. Yamaguchi, and K. Kobayashi, J. Lightwave Technol. 1, 195 (1983).
4.
4.S. J. Bae, J. M. Kim, C. Y. Park, and Y. T. Lee, Appl. Phys. B: Lasers Opt. 82 39 (2006).
5.
5.H. Gebretsadik, K. Kamath, W. D. Zhou, P. Bhattacharya, C. Caneau, and R. Bhat, Appl. Phys. Lett. 72, 135 (1998).
http://dx.doi.org/10.1063/1.121443
6.
6.A. R. Sugg, E. I. Chen, T. A. Richard, N. Holonyak, Jr., and K. C. Hsieh, Appl. Phys. Lett. 62, 1259 (1993).
http://dx.doi.org/10.1063/1.108700
7.
7.B. Koley, M. Dagenais, R. Jin, G. Simonis, J. Pham, G. Mclane, F. Johnson, and R. Whaley, J. Appl. Phys. 84, 600 (1998).
http://dx.doi.org/10.1063/1.368094
8.
8.N. Iwai, T. Mukaihara, N. Yamanaka, M. Ito, S. Arakawa, H. Shimizu, and A. Kasukawa, Furukawa Rev. 20, 1 (2001).
9.
9.J. M. Dallesasse, N. Holonyak, A. R. Sugg, T. A. Richard, and N. E. Zein, Appl. Phys. Lett. 57, 2844 (1990).
http://dx.doi.org/10.1063/1.103759
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/20/10.1063/1.2204654
Loading
View: Figures

Figures

Image of FIG. 1.

Click to view

FIG. 1.

(Color online) Oxidation rate of lattice matched InAlAs epilayer on InP substrate with various process temperatures.

Image of FIG. 2.

Click to view

FIG. 2.

(Color online) HRXRD of InAlAs oxides grown on InAlAs epilayer obtained from the various process temperatures. The inset figure represents FWHM of InAlAs oxides with various process temperatures ranging from . FWHM of InAlAs oxidation shows that higher crystalline quality is observed close to InAlAs epilayer at .

Image of FIG. 3.

Click to view

FIG. 3.

(Color online) (a) Observation of InAlAs oxide lattice constant on InAlAs epilayer lattice matched to InP substrate by HRXRD analysis. (b) Calculated strains between InAlAs oxides and InAlAs epilayer with various process temperatures lattice matched to InP (001) substrates.

Image of FIG. 4.

Click to view

FIG. 4.

(Color online) (a)–(d) TEM cross-sectional images of InAlAs oxides on InAlAs epilayer with the various process temperatures of (a) , (b) , (c) , and (d) . (, , and layers indicate the oxidized layer from the epilayer surface.)

Loading

Article metrics loading...

/content/aip/journal/apl/88/20/10.1063/1.2204654
2006-05-17
2014-04-23

Abstract

High resolution x-ray diffraction and transmission electron microscopy(TEM) were used to study the strain behavior in InAlAs oxides grown on epilayer lattice matched to InP (100) substrates by wet thermal oxidation technique. The relaxed strain morphology has been observed between the InAlAs oxides and lattice matched InAlAs epilayer to InP substrates with the optimization of process temperature, rate of oxidation, and time. Almost strain-free InAlAs oxide layer with high crystallographic quality was obtained on InAlAs epilayer, which is similar to that of lattice matched InAlAs epilayer grown on InP substrate.

Loading

Full text loading...

/deliver/fulltext/aip/journal/apl/88/20/1.2204654.html;jsessionid=3b1mhipg3l761.x-aip-live-06?itemId=/content/aip/journal/apl/88/20/10.1063/1.2204654&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/apl
true
true
This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigations of the characteristics of strain-free oxidation on InAlAs epilayer lattice matched to indium phosphide
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/20/10.1063/1.2204654
10.1063/1.2204654
SEARCH_EXPAND_ITEM