No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Investigations of the characteristics of strain-free oxidation on InAlAs epilayer lattice matched to indium phosphide
2.Y. Ohiso, H. Okamoto, R. Iga, K. Kishi, K. Tateno, and C. Amano, IEEE Photon. Technol. Lett. 13, 918 (2001).
3.I. Mito, M. Kitamura, K. Kobayashi, S. Murata, M. Seki, Y. Odagiri, H. Nishimoto, M. Yamaguchi, and K. Kobayashi, J. Lightwave Technol. 1, 195 (1983).
4.S. J. Bae, J. M. Kim, C. Y. Park, and Y. T. Lee, Appl. Phys. B: Lasers Opt. 82 39 (2006).
8.N. Iwai, T. Mukaihara, N. Yamanaka, M. Ito, S. Arakawa, H. Shimizu, and A. Kasukawa, Furukawa Rev. 20, 1 (2001).
Article metrics loading...
High resolution x-ray diffraction and transmission electron microscopy(TEM) were used to study the strain behavior in InAlAs oxides grown on epilayer lattice matched to InP (100) substrates by wet thermal oxidation technique. The relaxed strain morphology has been observed between the InAlAs oxides and lattice matched InAlAs epilayer to InP substrates with the optimization of process temperature, rate of oxidation, and time. Almost strain-free InAlAs oxide layer with high crystallographic quality was obtained on InAlAs epilayer, which is similar to that of lattice matched InAlAs epilayer grown on InP substrate.
Full text loading...
Most read this month