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-type AlN layer by Si ion implantation
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10.1063/1.2204656
/content/aip/journal/apl/88/20/10.1063/1.2204656
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/20/10.1063/1.2204656
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SIMS profile of the implanted Si (, ) in AlN after the activation annealing (, ).

Image of FIG. 2.
FIG. 2.

Temperature dependence of the carrier concentration of the sample annealed at for . The solid gray line is the fitting curve using Eq. (1) in a temperature range from .

Image of FIG. 3.
FIG. 3.

Temperature dependence of the mobility of the sample annealed at for . The solid gray line is the fitting curve using in a temperature range above .

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/content/aip/journal/apl/88/20/10.1063/1.2204656
2006-05-16
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: n-type AlN layer by Si ion implantation
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/20/10.1063/1.2204656
10.1063/1.2204656
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