Full text loading...
PL spectrum from a GaN layer at different temperatures. The QE of different PL bands: at ; at and 4% at ; at .
Dependence of the YL intensity on excitation intensity at . Points—experimental data. Solid lines—calculated by using Eq. (6) with the following parameters: , , , , and .
Schematic of PL process. (a) Decrease of the excitation intensity inside GaN layer; (b) band diagram of the GaN layer having a depletion region between and due to upward band bending near the layer surface; (c) cross section of the GaN layer with selected thin layer where acceptors with the density are shown as dots which emit PL in all directions. A fraction of the total PL intensity emitted from the layer is collected with a lens from the front side of the GaN layer.
Article metrics loading...