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Determination of acceptor concentration in GaN from photoluminescence
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10.1063/1.2204835
/content/aip/journal/apl/88/20/10.1063/1.2204835
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/20/10.1063/1.2204835
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL spectrum from a GaN layer at different temperatures. The QE of different PL bands: at ; at and 4% at ; at .

Image of FIG. 2.
FIG. 2.

Dependence of the YL intensity on excitation intensity at . Points—experimental data. Solid lines—calculated by using Eq. (6) with the following parameters: , , , , and .

Image of FIG. 3.
FIG. 3.

Schematic of PL process. (a) Decrease of the excitation intensity inside GaN layer; (b) band diagram of the GaN layer having a depletion region between and due to upward band bending near the layer surface; (c) cross section of the GaN layer with selected thin layer where acceptors with the density are shown as dots which emit PL in all directions. A fraction of the total PL intensity emitted from the layer is collected with a lens from the front side of the GaN layer.

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/content/aip/journal/apl/88/20/10.1063/1.2204835
2006-05-15
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Determination of acceptor concentration in GaN from photoluminescence
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/20/10.1063/1.2204835
10.1063/1.2204835
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