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GaBiAs: A material for optoelectronic terahertz devices
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10.1063/1.2205180
/content/aip/journal/apl/88/20/10.1063/1.2205180
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/20/10.1063/1.2205180
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Photoluminescence spectra of two GaBiAs layers grown at different temperatures.

Image of FIG. 2.
FIG. 2.

Optical absorption spectra of two GaBiAs layers grown at different temperatures.

Image of FIG. 3.
FIG. 3.

Optical pump induced temporal changes of the transmitted THz field magnitude measured on two different GaBiAs samples.

Image of FIG. 4.
FIG. 4.

The time-domain wave form measured on GaBiAs emitter-detector system (a) and its corresponding Fourier transform spectrum (b).

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/content/aip/journal/apl/88/20/10.1063/1.2205180
2006-05-16
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaBiAs: A material for optoelectronic terahertz devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/20/10.1063/1.2205180
10.1063/1.2205180
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