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Epitaxial growth of high-quality Ge films on nanostructured silicon substrates
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10.1063/1.2205728
/content/aip/journal/apl/88/20/10.1063/1.2205728
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/20/10.1063/1.2205728
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) AFM image of the surface morphology of Ge on (a) planar Si and (b) 2D nanostructured Si and (c) cross-section SEM image of Ge on nanostructured Si substrate and (d) composition scan (EDAX) of structure showing three points.

Image of FIG. 2.
FIG. 2.

Cross-section TEM images (composite) of Ge on (a) 2D nanostructured Si and (b) unpatterned Si showing different regions of the sample from the substrate (top) to the film (bottom).

Image of FIG. 3.
FIG. 3.

(Color online) Symetrical (004) reciprocal space maps (RSMs) of Ge on (a) planar Si and (b) 2D nanostructured Si substrate.

Image of FIG. 4.
FIG. 4.

(Color online) The Nomarski optical images of the etched surfaces of Ge on (a) planar Si substrate and (b) nanostructured Si substrate.

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/content/aip/journal/apl/88/20/10.1063/1.2205728
2006-05-16
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial growth of high-quality Ge films on nanostructured silicon substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/20/10.1063/1.2205728
10.1063/1.2205728
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