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Photoluminescence property of InGaN single quantum well with embedded AlGaN layer
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10.1063/1.2205731
/content/aip/journal/apl/88/20/10.1063/1.2205731
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/20/10.1063/1.2205731
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Energy band profile and wave function of (a) -thick SQW and (b) ( layer)– QW sandwiched between -thick GaN barriers under zero bias current.

Image of FIG. 2.
FIG. 2.

The in-plane dispersion of conduction and valence subbands of -thick SQW, QW with embedded - and -thick layers, and -thick SQW.

Image of FIG. 3.
FIG. 3.

Low-temperature cw PL spectra of nominally undoped -thick SQW, QW, and -thick SQW.

Image of FIG. 4.
FIG. 4.

Logarithmic plot of PL decay dynamics measured at the emission peaks in Fig. 3.

Image of FIG. 5.
FIG. 5.

Low-temperature PL decay dynamics of the -thick SQW and the QW structure with the layer around the PL peak wavelength of .

Image of FIG. 6.
FIG. 6.

Low-temperature cw PL spectra of the QW structures with different -layer thicknesses.

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/content/aip/journal/apl/88/20/10.1063/1.2205731
2006-05-16
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence property of InGaN single quantum well with embedded AlGaN δ layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/20/10.1063/1.2205731
10.1063/1.2205731
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