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Photoluminescence property of InGaN single quantum well with embedded AlGaN layer
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10.1063/1.2205731
/content/aip/journal/apl/88/20/10.1063/1.2205731
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/20/10.1063/1.2205731
/content/aip/journal/apl/88/20/10.1063/1.2205731
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/content/aip/journal/apl/88/20/10.1063/1.2205731
2006-05-16
2014-10-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence property of InGaN single quantum well with embedded AlGaN δ layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/20/10.1063/1.2205731
10.1063/1.2205731
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