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Analysis of boron strain compensation in silicon-germanium alloys by Raman spectroscopy
5.W. Byra, Solid State Commun. 9, 2271 (1971).
8.J. A. Dean, Lange’s Handbook of Chemistry, 15th ed. (McGraw-Hill, New York, 1998).
9.Properties of Silicon Germanium and SiGe: Carbon, edited by E. Kasper and K. Lyutovich (INSPEC, IEE, London, 2000).
10.Thin Films: Heteroepitaxial Systems, edited by W. Liu and M. Santos (World Scientific, Singapore, 1999), Vol. 15.
12.S. E. Thompson, M. Armstrong, C. Auth, S. Cea, R. Chau, T. H. Glenn Glass, J. Klaus, Z. Ma, B. Mcintyre, and A. Murthy, IEEE Electron Device Lett. 25, 191 (2004).
13.P. Chidambaram, B. Smith, L. Hall, H. Bu, S. Chakravarthi, Y. Kim, A. Samoilov, A. Kim, P. Jones, and R. Irwin, 2004 Symposium on VLSI Technology Digest of Technical Papers, Honolulu, HI, 15–17 June 2004 (IEEE, New York, 2004), pp. 48–49.
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