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Carrier concentration dependence of acceptor activation energy in -type ZnO
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10.1063/1.2206700
/content/aip/journal/apl/88/20/10.1063/1.2206700
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/20/10.1063/1.2206700

Figures

Image of FIG. 1.
FIG. 1.

NBE cathodoluminescence spectra of samples 1–4 taken at room temperature. The peaks are at 382, 384, 385, and , respectively. Inset: broad-range CL spectra of the same samples.

Image of FIG. 2.
FIG. 2.

Arrhenius plot showing the decay of normalized NBE luminescence intensity with increasing temperature for sample 1 (open squares), sample 2 (open circles), sample 3 (open diamonds), and sample 4 (open triangles). The linear fits (solid lines) yielded activation energies of , , , and for samples 1, 2, 3, and 4, respectively. The data were vertically offset for clarity. Inset: Exponential decrease of CL intensity for sample 1 (open squares) and the fit (solid line).

Image of FIG. 3.
FIG. 3.

Decrease of activation energy as a function of ionized acceptor concentration. Inset: Temperature dependence of hole concentration in sample 4.

Tables

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Table I.

Room-temperature electronic properties of Sb-doped -type ZnO films.

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/content/aip/journal/apl/88/20/10.1063/1.2206700
2006-05-18
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carrier concentration dependence of acceptor activation energy in p-type ZnO
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/20/10.1063/1.2206700
10.1063/1.2206700
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