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Fabricated quantum dot memory structure.
AFM image of self-assembled quantum dots on .
Arrhenius plot of retention time vs reciprocal temperature with different negative gate biases. (a) Memory devices with tunnel oxide and (b) Memory devices with tunnel oxide. The activation energy is independent of the gate biases.
(a) Arrhenius plot of retention time vs reciprocal temperature for the memory devices with different tunnel oxide thicknesses. (b) When the tunnel oxide thickness increases from , the activation energy decreases from .
Schematic energy band diagram of memory devices. For thick tunnel oxide, , but ; for thin tunnel oxide.
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