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(a) Cross-sectional SEM image of nanoscale lateral epitaxially overgrown GaN and (b) a higher magnification SEM image of the region near the interface.
AFM micrographs of (a) overgrown (NLEO) GaN with nanoporous as a mask and (b) control GaN sample grown without nanomask. The overgrown GaN shows an improved surface morphology with a reduced surface pit density.
Bright field TEM image of the NLEO GaN, which shows the reduction of threading dislocations by the blockade imposed by the nanomask (arrowheads) and subsequent bending near the interface.
Room temperature PL spectra of the overgrown GaN (NLEO) with nanoporous mask and control GaN films directly grown without nanomask. The inset is the enlarged view of the band-edge PL spectrum at from the overgrown GaN film.
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