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Improvement of microstructural and optical properties of GaN layer on sapphire by nanoscale lateral epitaxial overgrowth
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10.1063/1.2207487
/content/aip/journal/apl/88/21/10.1063/1.2207487
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/21/10.1063/1.2207487
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Figures

Image of FIG. 1.
FIG. 1.

(a) Cross-sectional SEM image of nanoscale lateral epitaxially overgrown GaN and (b) a higher magnification SEM image of the region near the interface.

Image of FIG. 2.
FIG. 2.

AFM micrographs of (a) overgrown (NLEO) GaN with nanoporous as a mask and (b) control GaN sample grown without nanomask. The overgrown GaN shows an improved surface morphology with a reduced surface pit density.

Image of FIG. 3.
FIG. 3.

Bright field TEM image of the NLEO GaN, which shows the reduction of threading dislocations by the blockade imposed by the nanomask (arrowheads) and subsequent bending near the interface.

Image of FIG. 4.
FIG. 4.

Room temperature PL spectra of the overgrown GaN (NLEO) with nanoporous mask and control GaN films directly grown without nanomask. The inset is the enlarged view of the band-edge PL spectrum at from the overgrown GaN film.

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/content/aip/journal/apl/88/21/10.1063/1.2207487
2006-05-24
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improvement of microstructural and optical properties of GaN layer on sapphire by nanoscale lateral epitaxial overgrowth
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/21/10.1063/1.2207487
10.1063/1.2207487
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