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(a) Schematic diagram of the energy bands of the charge qubit as a function of . Dashed lines represent the energy bands for the odd-parity state. (b) Spatial superconducting gap profile, which is favorable for the QP-poisoning-free SET device. (c) Scanning electron micrograph of the SET sample, whose island and leads are 10 and thick, respectively. The gate electrode is not seen in this picture.
(a) Intensity plot of as functions of and . The device has thick island and thick leads. (b) Observed superconducting energy gap of Al as a function of the film thickness.
curves at different gate voltages for (a) the sample a and (b) the sample . Each curve is offset by for clarity. (c) Gate charge dependence of the switching current for all the measured samples. Note that random offset charges have not been subtracted.
Sample parameters of large ratio samples.
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