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Realization of freestanding InP membranes on Si by low-temperature wafer bonding and stress analysis using micro-Raman spectroscopy
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10.1063/1.2207834
/content/aip/journal/apl/88/22/10.1063/1.2207834
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/22/10.1063/1.2207834
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Figures

Image of FIG. 1.
FIG. 1.

Low-temperature-bonded InP thin film on Si susbtrate with a thin oxide interface layer of .

Image of FIG. 2.
FIG. 2.

Released InP freestanding membranes on Si substrate using a combination of dual wet etching in buffered HF and 30% KOH. The air gap is about . This is confirmed from white light interferometry.

Image of FIG. 3.
FIG. 3.

(Color online) Raman spectra of InP recorded from various positions of the freestanding membranes using a very low laser power excitation. The spectra are dominated by LO and TO phonons of InP. The inset shows the white light interferometric image and the Raman excitation positions. The dashed straight lines in the spectra mark the TO and LO phonon peak positions of bulk InP.

Image of FIG. 4.
FIG. 4.

Variation of surface stress profiles of the freestanding InP membranes using two separate Raman line scans on the square membranes held by branched beams (inset shows the optical micrograph of the linescan regions). These stress values are estimated from the LO phonon peak shift.

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/content/aip/journal/apl/88/22/10.1063/1.2207834
2006-05-30
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Realization of freestanding InP membranes on Si by low-temperature wafer bonding and stress analysis using micro-Raman spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/22/10.1063/1.2207834
10.1063/1.2207834
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