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Low-temperature-bonded InP thin film on Si susbtrate with a thin oxide interface layer of .
Released InP freestanding membranes on Si substrate using a combination of dual wet etching in buffered HF and 30% KOH. The air gap is about . This is confirmed from white light interferometry.
(Color online) Raman spectra of InP recorded from various positions of the freestanding membranes using a very low laser power excitation. The spectra are dominated by LO and TO phonons of InP. The inset shows the white light interferometric image and the Raman excitation positions. The dashed straight lines in the spectra mark the TO and LO phonon peak positions of bulk InP.
Variation of surface stress profiles of the freestanding InP membranes using two separate Raman line scans on the square membranes held by branched beams (inset shows the optical micrograph of the linescan regions). These stress values are estimated from the LO phonon peak shift.
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