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Fabrication of fin field-effect transistor silicon nanocrystal floating gate memory using photochemical vapor deposition
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10.1063/1.2208268
/content/aip/journal/apl/88/22/10.1063/1.2208268
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/22/10.1063/1.2208268
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SEM image of Si nanocrystal formed by photo-CVD on step patterned Si wafer. Upper region is the top surface and lower is the side surface of etched Si wafer. Inset of figure is the SEM image after a formation of Si nanocrystal at Si fin and source/drain extension region.

Image of FIG. 2.
FIG. 2.

Cross-section TEM image of final FinFET Si nanocrystal floating gate memory.

Image of FIG. 3.
FIG. 3.

and curves of FinFET Si nanocrystal floating gate memory (, , and ).

Image of FIG. 4.
FIG. 4.

characteristics of FinFET Si nanocrystal floating gate memory after write and erase.

Image of FIG. 5.
FIG. 5.

Charge retention characteristics in FinFET Si nanocrystal floating gate memory.

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/content/aip/journal/apl/88/22/10.1063/1.2208268
2006-05-30
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication of fin field-effect transistor silicon nanocrystal floating gate memory using photochemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/22/10.1063/1.2208268
10.1063/1.2208268
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