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Fabrication of fin field-effect transistor silicon nanocrystal floating gate memory using photochemical vapor deposition
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10.1063/1.2208268
/content/aip/journal/apl/88/22/10.1063/1.2208268
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/22/10.1063/1.2208268
/content/aip/journal/apl/88/22/10.1063/1.2208268
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/content/aip/journal/apl/88/22/10.1063/1.2208268
2006-05-30
2014-09-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication of fin field-effect transistor silicon nanocrystal floating gate memory using photochemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/22/10.1063/1.2208268
10.1063/1.2208268
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