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(a) Schematic and (b) SEM image of a planar FIB junction. (c) SAD pattern of an epitaxial bilayer film on SiC substrate. (d) High-resolution TEM image near the interface, which is indicated by the arrows.
Temperature dependence of resistance of a FIB junction and temperature dependence of resistivity of a film.
Current-voltage characteristics of the FIB junction shown in Fig. 2 at , 15, 24, and . Inset: temperature dependence of (squares for measurement and solid line for Likharev model fit) and (dashed line).
(Color online) (a) Current-voltage characteristics of an e-beam processed junction with and without applied microwave radiation at . (b) Measured (squares) and simulated (lines) results of microwave voltage dependences of the critical current and of the first and second Shapiro step heights.
(Color online) Magnetic field dependence of critical current of a FIB junction at with both increasing (open squares) and decreasing (solid squares) field sweeps.
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