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Effects of strain on the optimal annealing temperature of GaInNAsSb quantum wells
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10.1063/1.2208937
/content/aip/journal/apl/88/22/10.1063/1.2208937
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/22/10.1063/1.2208937

Figures

Image of FIG. 1.
FIG. 1.

PL intensity as a function of different annealing temperatures for GaInNAs(Sb) QWs. These samples contained 32%–34% indium and 0%–2% antimony content.

Image of FIG. 2.
FIG. 2.

PL intensity plotted against different anneal temperatures for GaInNAs(Sb) QWs. These samples contained 8%–10% indium and 0%–5.4% antimony content.

Image of FIG. 3.
FIG. 3.

PL intensities of GaInNAsSb QWs as a function of different annealing temperatures. These samples were grown under constant antimony flux while the indium concentration was varied from 8% to 32%.

Tables

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Table I.

A summary of the in-plane strains for QWs, with varying antimony and indium concentrations, as determined by HRXRD. Antimony fluxes, rather than antimony concentrations, are listed since the concentrations depended upon the indium concentration due to incorporation interplay between the two elements.

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/content/aip/journal/apl/88/22/10.1063/1.2208937
2006-06-01
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of strain on the optimal annealing temperature of GaInNAsSb quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/22/10.1063/1.2208937
10.1063/1.2208937
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