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Predicted ultrafast single-qubit operations in semiconductor quantum dots
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) (a) SAQD and CQD quantum dot geometries. For SAQDs, the incident light is taken to be incident along the growth direction. (b) Level diagram for a quantum dot with one electron in the lowest conduction band state, perturbed by incident light detuned below the band gap. The electron spin precesses in response to the effective magnetic field oriented along the propagation direction of the incident light.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Energy levels for an dot with band gap. The incident power density is and the conduction band electron has spin parallel to the direction of the incident light. (b) CdSe dot with band gap.

Image of FIG. 3.
FIG. 3.

(Color online) Stark splittings as a function of band gap and detuning for InAs, , , and CdSe quantum dots. The angle is for an incident pulse with .

Image of FIG. 4.
FIG. 4.

(Color online) Sensitivity of to variations in the band gap as a function of band gap and detuning, estimated using a finite difference approximation. Note that larger detunings than in Fig. 2 were used so there would be values of at fixed values of for every band gap value. is computed assuming a reference pulse.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Predicted ultrafast single-qubit operations in semiconductor quantum dots