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Dose rate effects in bipolar oxides: Competition between trap filling and recombination
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10.1063/1.2210293
/content/aip/journal/apl/88/23/10.1063/1.2210293
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/23/10.1063/1.2210293
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Energy-level scheme of the one hole trap, one recombination level model. The arrows indicate the allowed transitions.

Image of FIG. 2.
FIG. 2.

Simulated degradation as a function of the dose rate for several densities of recombination levels from . The chosen parameters in this figure are the following: , , , , , and the temperature is .

Image of FIG. 3.
FIG. 3.

Experimental results obtained on discrete NPN (2N2222) and PNP (2N2907) bipolar transistors from STMicroelectronics for two total doses [20 and ]. The degradation vs dose rate exhibits the inverse S-shaped behavior characteristic of the ELDRS (solid line). More experimental details can be found in Ref. 30.

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/content/aip/journal/apl/88/23/10.1063/1.2210293
2006-06-08
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dose rate effects in bipolar oxides: Competition between trap filling and recombination
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/23/10.1063/1.2210293
10.1063/1.2210293
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