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Microwave nanotube transistor operation at high bias
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10.1063/1.2210447
/content/aip/journal/apl/88/23/10.1063/1.2210447
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/23/10.1063/1.2210447
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SEM image of SWCNT FET.

Image of FIG. 2.
FIG. 2.

Current-voltage characteristic at , , and for SWCNT FET. Inset shows small bias depletion curve.

Image of FIG. 3.
FIG. 3.

Device geometry and rf model for interpretation.

Image of FIG. 4.
FIG. 4.

Dynamical conductance at dc and at .

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/content/aip/journal/apl/88/23/10.1063/1.2210447
2006-06-08
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Microwave nanotube transistor operation at high bias
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/23/10.1063/1.2210447
10.1063/1.2210447
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