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Stability of electron-beam poling in N or Ge-doped films
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10.1063/1.2208960
/content/aip/journal/apl/88/24/10.1063/1.2208960
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/24/10.1063/1.2208960

Figures

Image of FIG. 1.
FIG. 1.

The SH signal vs different annealing temperatures for (UPS264). The dose is and the electron acceleration is at .

Image of FIG. 2.
FIG. 2.

The SH signal vs different annealing temperatures for samples . For UPS314, the dose is and the electron acceleration is at . For UPS325, the dose is . The curve is normalized power for comparison with UPS314. The dash line is just extrapolation.

Image of FIG. 3.
FIG. 3.

The SH signal vs different annealing times (160, 200, and ) for the sample UPS325.

Image of FIG. 4.
FIG. 4.

Partial Maker fringe recorded along the annealing at (a) and (b) of the sample UPS325. Note the appearance of the thick nonlinear layer fringes for time longer than in (a) and from the beginning in (b) until the end of the experiment. The angular period is indicated by the two vertical bars corresponding to 8°, as in Ref. 2.

Tables

Generic image for table
Table I.

The compositions of films elaborated by MDECR. The films were all used without thermal annealing.

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/content/aip/journal/apl/88/24/10.1063/1.2208960
2006-06-14
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Stability of electron-beam poling in N or Ge-doped H:SiO2 films
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/24/10.1063/1.2208960
10.1063/1.2208960
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