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(Color online) Typical SWNTFET characteristics. Inset is the transconductance response in dark and light (see text for details).
(Color online) vs characteristics of P3HT coated SWNT device structure in light and dark conditions. Top inset is the image of a typical device structure consisting of concentric regions with the drain and source formed in the outer and inner regions, the intermediate region forms the SWNT, along with the polymer coating on it. Bottom inset is the AFM topography image of a device region showing the SWNT coated with nonuniform polymer patches from a dilute polymer solution.
(Color online) (a) vs in dark and light conditions of the polymer coated SWNT. (b) response to a periodic with an amplitude of in dark conditions (solid line) and in light conditions (dashed line).
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