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Control of single-wall-nanotube field-effect transistors via indirect long-range optically induced processes
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10.1063/1.2209712
/content/aip/journal/apl/88/24/10.1063/1.2209712
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/24/10.1063/1.2209712
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Typical SWNTFET characteristics. Inset is the transconductance response in dark and light (see text for details).

Image of FIG. 2.
FIG. 2.

(Color online) vs characteristics of P3HT coated SWNT device structure in light and dark conditions. Top inset is the image of a typical device structure consisting of concentric regions with the drain and source formed in the outer and inner regions, the intermediate region forms the SWNT, along with the polymer coating on it. Bottom inset is the AFM topography image of a device region showing the SWNT coated with nonuniform polymer patches from a dilute polymer solution.

Image of FIG. 3.
FIG. 3.

(Color online) (a) vs in dark and light conditions of the polymer coated SWNT. (b) response to a periodic with an amplitude of in dark conditions (solid line) and in light conditions (dashed line).

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/content/aip/journal/apl/88/24/10.1063/1.2209712
2006-06-13
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Control of single-wall-nanotube field-effect transistors via indirect long-range optically induced processes
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/24/10.1063/1.2209712
10.1063/1.2209712
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