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Oxygen transport and reaction mechanisms in rhenium gate contacts on hafnium oxide films on Si
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10.1063/1.2209720
/content/aip/journal/apl/88/24/10.1063/1.2209720
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/24/10.1063/1.2209720
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Total amounts vs annealing temperature in structures before (circles) and after (triangles) Re removal by a etch as well as from the reference, uncapped (squares) as determined by nuclear reaction analysis using the nuclear reaction as a function of annealing temperature.

Image of FIG. 2.
FIG. 2.

(Color online) Re x-ray photoelectron regions from the structures after Re removal by a etch, metallic Re, as well as from the monitor sample.

Image of FIG. 3.
FIG. 3.

(Color online) Excitation curves of the nuclear reaction around the resonance at corresponding to the concentration profiles from the samples annealed in of for at (a) before and (b) after etch.

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/content/aip/journal/apl/88/24/10.1063/1.2209720
2006-06-13
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Oxygen transport and reaction mechanisms in rhenium gate contacts on hafnium oxide films on Si
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/24/10.1063/1.2209720
10.1063/1.2209720
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