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Schematic conduction band structure of the detector. Shown are the squared moduli of the relevant wave functions. The grey arrows show the transport of the electrons through the structure.
Series of curves for N516 () between 8 and . The kinks correspond to special alignment conditions between states of the extraction quantum stair and the ground state.
Absorption at room temperature (“hanging” from the top axis) and responsivity measurements at different device temperatures and for both structures.
Responsivity and detectivity as functions of temperature for both devices.
Layer sequences for the samples N516 and N538 . denotes InAlAs barrier thickness in Å, InGaAs well thickness in Å, and values in bold indicate the Si-doped layer, producing an effective sheet carrier density .
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