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Spatial imaging and mechanical control of spin coherence in strained GaAs epilayers
1.D. E. Aspnes and M. Cardona, Phys. Rev. B 15, 726 (1977).
10.Fourteen samples in all were measured from six separate wafers.
13.This was desirable for the TRKR measurement, as the DNP creates a large additional effective magnetic field, greatly altering the observed precession frequency of the electrons. The DNP could be removed by blocking the laser and reversing the applied field for a short time.
17.V. I. Safarov and A. N. Titkov, Physica B & C 117–118, 497 (1983).
18.M. Ilegems, in The Technology and Physics of Molecular Beam Epitaxy, edited by E. H. C. Parker (Plenum, London, 1985).
21.This value is based on a biaxial strain system in contrast to our largely uniaxial geometry, making comparison difficult.
28.Considered for the current geometry; applied field ⊥ electron spin polarization.
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The effect of uniaxial tensile strain on spin coherence in -type GaAs epilayers is probed using time-resolved Kerr rotation, photoluminescence, and optically detected nuclear magnetic resonance spectroscopies. The band gap, electron spin lifetime, electron factor, and nuclear quadrupole splitting are simultaneously imaged over millimeter scale areas of the epilayers for continuously varying values of strain. All-optical nuclear magnetic resonance techniques allow access to the strain-induced nuclear quadrupolar resonance splitting in field regimes not easily addressable using conventional optically detected nuclear magnetic resonance.
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