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Influence of defects on nanotube transistor performance
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10.1063/1.2211932
/content/aip/journal/apl/88/24/10.1063/1.2211932
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/24/10.1063/1.2211932
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Two-dimensional (2D) cross section of the device. The device is a 3D coaxial CNTFET with channel length and source/drain extensions doped to . The channel is a semiconducting (13,0) zigzag CNT with diameter and band gap. The gate oxide is assumed to be thick with dielectric constant .

Image of FIG. 2.
FIG. 2.

(Color online) Effect of the vacancy on the electronic properties of the CNTFET. (a) The conduction band of the control vs vacancy defected CNT at and . (b) The carrier distribution along the channel of the two devices under bias conditions as in (a). (c) The characteristics at . Inset: the for , 0.35, and .

Image of FIG. 3.
FIG. 3.

(Color online) Effect of a negatively charged impurity in different locations of the device. The charged impurity is placed (A) in the middle of the CNT, (B) in the middle of the oxide, and (C) near the gate electrode. (a) The conduction band of the control vs the different charged impurity cases at . (b) The carrier distribution along the channel for the impurity locations (A)–(C) and the same bias conditions as in (a). (c) The characteristics for . Inset: for .

Image of FIG. 4.
FIG. 4.

(Color online) Effect of a positively charged impurity in different locations of the device. The charged impurity is placed (A) in the middle of the CNT, (B) in the middle of the oxide, and (C) near the gate electrode. (a) The conduction band of the control vs the different charged impurity cases at . (b) The charge distribution along the channel for the impurity locations (A)–(C) and the same bias conditions as in (a). (c) The characteristics for . Inset: for .

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/content/aip/journal/apl/88/24/10.1063/1.2211932
2006-06-12
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of defects on nanotube transistor performance
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/24/10.1063/1.2211932
10.1063/1.2211932
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