Full text loading...
Current-voltage curves (a) for the ITO/F8P/Mg device and (b) for the ITO/F8P/Ca device at different temperatures.
The real part of the complex conductivity at and (a) for an ITO/F8P/Mg device and (b) for an ITO/F8P/Ca device
Temperature dependence of the real part of the complex conductivity (a) for the ITO/F8P/Mg device with and (b) for the ITO/F8P/Ca device with .
The Arrhenius plots of the dc conductivity at different voltages for (a) the ITO/F8P/Mg device in the forward bias, (b) the ITO/F8P/Ca device biased positively, and (c) the ITO/F8P/Ca device biased negatively. The dashed lines represent the fittings for an exponential dependence of the conductivity with the reciprocal of the temperature.
Voltage dependence of the activation energy and the dc conductivity prefactor (a) for the ITO/F8P/Mg device, (b) for the ITO/F8P/Ca device, and (c) for the ITO/F8P/Ca device. The dashed lines are given by Schottky-type barrier lowering functions.
Article metrics loading...