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Charge-carrier mobility in an organic semiconductor thin film measured by photoinduced electroluminescence
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Structure of the devices used for measuring the mobility of , where is 1500, 1750, or . The apparatus for the measurements was set up so that the CuPC layer could be excited by a laser pulse and that any reflected or emitted light could be detected by a photomultiplier. (b) Schematic diagram illustrating the timing of events to perform a photoinduced EL transient measurement.

Image of FIG. 2.
FIG. 2.

Signals from various measurements averaged over 1000 repetitions offset for clarity. (a) Photoinduced EL transient measurement at a field of for a device containing a layer of . The top signal is that of the case when the laser pulse is fired while bias is applied. The middle signal is that of the case when only the laser is fired. The bottom signal—on which the dash lines were drawn to determine transit time—is the difference between the top and middle signals. (b) The top signal is a photoinduced EL transient measurement, performed on the control device with no generator layer, in the case when the laser is fired while a field of is applied. The bottom signal is that of a device measured when only bias is applied .

Image of FIG. 3.
FIG. 3.

Normalized photoinduced EL transients used to calculated mobility at a field of . The top, middle, and bottom signals correspond to the devices containing 1500, 1750, and layers of , respectively. For clarity, the top and middle signals are offset from the bottom signal by 4 and , respectively. The inset shows calculated mobility as a function of the layer thickness. The higher and lower groups of values correspond to measurements performed at 100 and , respectively.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Charge-carrier mobility in an organic semiconductor thin film measured by photoinduced electroluminescence