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Large image potential effects in and two-dimensional quantum well structures
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10.1063/1.2212279
/content/aip/journal/apl/88/24/10.1063/1.2212279
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/24/10.1063/1.2212279

Figures

Image of FIG. 1.
FIG. 1.

Conduction band offset , charge image , and confinement potentials for wide (top, left), (top, right), (bottom, left), and (bottom, right) 2DQWs. Ground (dashed lines) and first excited (double dotted-dashed lines) electron wave functions are also depicted.

Image of FIG. 2.
FIG. 2.

(a) Carrier recombination energy , calculated taking into account band offset potentials . (b) Carrier recombination energy , calculated considering the charge image contribution to the confinement potential, as a function of the well width. The triangles and open circles depict for and 2DQWs, respectively, calculated taking into account thick nonabrupt interfaces but disregarding the charge image contribution. (c) Charge image related shift , calculated for (dotted lines), (dash-dotted lines), (dashed lines), and (solid lines) 2DQWs.

Tables

Generic image for table
Table I.

Semiconductor parameters used in the numerical calculations of the recombination energies (Refs. 2, 3, and 15).

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/content/aip/journal/apl/88/24/10.1063/1.2212279
2006-06-15
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Large image potential effects in Si∕SrTiO3 and Si∕HfO2 two-dimensional quantum well structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/24/10.1063/1.2212279
10.1063/1.2212279
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