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Conduction band offset , charge image , and confinement potentials for wide (top, left), (top, right), (bottom, left), and (bottom, right) 2DQWs. Ground (dashed lines) and first excited (double dotted-dashed lines) electron wave functions are also depicted.
(a) Carrier recombination energy , calculated taking into account band offset potentials . (b) Carrier recombination energy , calculated considering the charge image contribution to the confinement potential, as a function of the well width. The triangles and open circles depict for and 2DQWs, respectively, calculated taking into account thick nonabrupt interfaces but disregarding the charge image contribution. (c) Charge image related shift , calculated for (dotted lines), (dash-dotted lines), (dashed lines), and (solid lines) 2DQWs.
Semiconductor parameters used in the numerical calculations of the recombination energies (Refs. 2, 3, and 15).
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