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High quality thin GaN templates grown by hydride vapor phase epitaxy on sapphire substrates
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10.1063/1.2213175
/content/aip/journal/apl/88/24/10.1063/1.2213175
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/24/10.1063/1.2213175
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Reflectivity signal monitored in situ for a HVPE GaN layer with Ga polarity. The insets show the corresponding micrograph of the GaN surface measured by phase contrast optical microscopy (left-hand side) and an enlarged view of the oscillations occurring during the layer thickening (right-hand side). (b) Same as (a) for a HVPE GaN layer with N polarity. The inset shows the corresponding optical micrograph of the GaN surface (see text for details). Optical microscope images are wide.

Image of FIG. 2.
FIG. 2.

AFM image ( scan) of an thick HVPE GaN template.

Image of FIG. 3.
FIG. 3.

Dislocation density as determined by AFM vs nucleation layer thickness.

Image of FIG. 4.
FIG. 4.

Low temperature PL and reflectivity spectra of an thick HVPE GaN template.

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/content/aip/journal/apl/88/24/10.1063/1.2213175
2006-06-14
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High quality thin GaN templates grown by hydride vapor phase epitaxy on sapphire substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/24/10.1063/1.2213175
10.1063/1.2213175
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