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(Color online) (a) Reflectivity signal monitored in situ for a HVPE GaN layer with Ga polarity. The insets show the corresponding micrograph of the GaN surface measured by phase contrast optical microscopy (left-hand side) and an enlarged view of the oscillations occurring during the layer thickening (right-hand side). (b) Same as (a) for a HVPE GaN layer with N polarity. The inset shows the corresponding optical micrograph of the GaN surface (see text for details). Optical microscope images are wide.
AFM image ( scan) of an thick HVPE GaN template.
Dislocation density as determined by AFM vs nucleation layer thickness.
Low temperature PL and reflectivity spectra of an thick HVPE GaN template.
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