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High- and low- nanocomposite gate dielectrics for low voltage organic thin film transistors
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10.1063/1.2213196
/content/aip/journal/apl/88/24/10.1063/1.2213196
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/24/10.1063/1.2213196
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Selected area electron diffraction patterns of (a) pure polycrystalline layer and (b) amorphous composite films. AFM images of (c) pure layer (d) composite films. The value of rms roughness is for pure layer and for the composite layer.

Image of FIG. 2.
FIG. 2.

(Color online) Plots of and high-frequency characteristics (inset) measured from the Au/dielectrics/ITO structure.

Image of FIG. 3.
FIG. 3.

(Color online) Field effect transistor characteristics of our pentacene TFTs: curves at various obtained from TFTs with (a) HMDS-treated dielectric layer and with (c) HMDS-treated dielectric layers; and curves for the estimation of saturation regime mobility that were obtained at from TFTs with (b) HMDS-treated pure dielectric layer and with (d) HMDS-treated dielectric layers (channel length and channel width ).

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/content/aip/journal/apl/88/24/10.1063/1.2213196
2006-06-16
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-k and low-k nanocomposite gate dielectrics for low voltage organic thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/24/10.1063/1.2213196
10.1063/1.2213196
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