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Electrical characterization of defects introduced during electron beam deposition of Pd Schottky contacts on -type Ge
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10.1063/1.2213203
/content/aip/journal/apl/88/24/10.1063/1.2213203
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/24/10.1063/1.2213203

Figures

Image of FIG. 1.
FIG. 1.

DLTS spectra of the resistively deposited (control) Pd Schottky contacts to reveal that these samples contain no electron or hole traps [curves and , respectively] within the detection limit of our DLTS system. Curves and are the DLTS electron and hole trap spectra, respectively, of Pd Schottky contacts deposited by EBD, recorded using a rate window of at a quiescent reverse bias of . For the electron-trap spectra the pulse was into forward bias. Hole trap spectra were obtained by applying an injection pulse of into forward bias. Curves and are the spectra for electron irradiated resistively deposited Pd Schottky contacts to , recorded under the same conditions as curves and , respectively.

Image of FIG. 2.
FIG. 2.

Arrhenius plots for EBD (circles) and electron irradiation induced (triangles) electron traps in Ge. All data were acquired using the bias and pulsing conditions defined in the caption of Fig. 1.

Image of FIG. 3.
FIG. 3.

Arrhenius plots for EBD (circles) and electron irradiation induced (triangles) hole traps in Ge. All data were acquired using the bias and pulsing conditions defined in the caption of Fig. 1.

Tables

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Table I.

Electronic properties of defects introduced in -type Ge during electron beam deposition (EBD) and MeV electron irradiation of Pd Schottky contacts.

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/content/aip/journal/apl/88/24/10.1063/1.2213203
2006-06-14
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical characterization of defects introduced during electron beam deposition of Pd Schottky contacts on n-type Ge
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/24/10.1063/1.2213203
10.1063/1.2213203
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