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Role of edge dislocations in enhancing the yellow luminescence of -type GaN
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10.1063/1.2213509
/content/aip/journal/apl/88/24/10.1063/1.2213509
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/24/10.1063/1.2213509

Figures

Image of FIG. 1.
FIG. 1.

Room temperature PL spectra of GaN samples A, B, and C of series I, which have the same Si doping, where the intensity of the near-band-edge luminescence peak at is normalized. The integrated intensity ratios of the yellow luminescence band to the near-band-edge emission are 2.14, 1.20, and 0.27 for samples A, B, and C, respectively.

Image of FIG. 2.
FIG. 2.

Integrated intensity of the yellow luminescence band to near-band-edge emission (solid squares) and the net carrier concentration (hollow triangles) vs DCXRD FWHM at the (102) plane for the ten GaN samples of series I.

Image of FIG. 3.
FIG. 3.

Room temperature PL spectra of GaN samples D, E, F, and G in series II, which have the same DCXRD FWHM at the (102) plane as narrow as , where the intensity of the near-band-edge luminescence peak at is normalized. The fluxes used in the growth were 0, 0.05, 0.22, and for samples D, E, F, and G, respectively. The yellow luminescence band is amplified ten times for the purpose of clarity. The insets are the PL spectrum and -scan rocking curve of DCXRD of sample G.

Tables

Generic image for table
Table I.

Characterization results and Si doping condition of series I -type GaN samples.

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/content/aip/journal/apl/88/24/10.1063/1.2213509
2006-06-14
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Role of edge dislocations in enhancing the yellow luminescence of n-type GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/24/10.1063/1.2213509
10.1063/1.2213509
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