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High temperature nitrogen annealing induced interstitial oxygen precipitation in silicon epitaxial layer on heavily arsenic-doped silicon wafer
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10.1063/1.2213516
/content/aip/journal/apl/88/24/10.1063/1.2213516
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/24/10.1063/1.2213516
/content/aip/journal/apl/88/24/10.1063/1.2213516
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/content/aip/journal/apl/88/24/10.1063/1.2213516
2006-06-14
2014-07-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High temperature nitrogen annealing induced interstitial oxygen precipitation in silicon epitaxial layer on heavily arsenic-doped silicon wafer
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/24/10.1063/1.2213516
10.1063/1.2213516
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