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High temperature nitrogen annealing induced interstitial oxygen precipitation in silicon epitaxial layer on heavily arsenic-doped silicon wafer
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10.1063/1.2213516
/content/aip/journal/apl/88/24/10.1063/1.2213516
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/24/10.1063/1.2213516

Figures

Image of FIG. 1.
FIG. 1.

SIMS depth profiles of oxygen concentration from (a) samples A–C. Region I and region II are for sample C only; (b) sample D and reference sample.

Image of FIG. 2.
FIG. 2.

A cross-sectional TEM image of sample C. The image was taken along the zone axis.

Image of FIG. 3.
FIG. 3.

HRTEM images of (a) the bright “dot” observed in Fig. 2; (b) the needlelike defect lies in the picture plane in Fig. 2.

Image of FIG. 4.
FIG. 4.

SIMS profiles of N concentration from reference sample and sample C.

Tables

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Table I.

Sample annealing conditions.

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/content/aip/journal/apl/88/24/10.1063/1.2213516
2006-06-14
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High temperature nitrogen annealing induced interstitial oxygen precipitation in silicon epitaxial layer on heavily arsenic-doped silicon wafer
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/24/10.1063/1.2213516
10.1063/1.2213516
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