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Schottky barrier between and graphite: Implications for metal/SiC contact formation
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10.1063/1.2213928
/content/aip/journal/apl/88/24/10.1063/1.2213928
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/24/10.1063/1.2213928
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

C (a) and Si (b) photoelectron spectra of on-axis oriented (sample 1) after the four preparation steps mentioned in the text. All spectra are normalized to the same amplitude.

Image of FIG. 2.
FIG. 2.

The C and Si core level binding energies of the bulk component as a function of preparation and sample doping. The scale on the right hand side gives the position of the surface Fermi level with respect to the valence band maximum . The C flatband binding energy of -type/-type amounts to .

Image of FIG. 3.
FIG. 3.

Band lineup at the interface between graphite and -type (left) and -type (right).

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/content/aip/journal/apl/88/24/10.1063/1.2213928
2006-06-12
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Schottky barrier between 6H-SiC and graphite: Implications for metal/SiC contact formation
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/24/10.1063/1.2213928
10.1063/1.2213928
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