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Effect of oxygen annealing on Mn doped ZnO diluted magnetic semiconductors
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10.1063/1.2213930
/content/aip/journal/apl/88/24/10.1063/1.2213930
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/24/10.1063/1.2213930
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) X-ray diffraction of thin films grown at a partial pressure of and annealed films.

Image of FIG. 2.
FIG. 2.

(Color online) High resolution TEM image of (grown at ) showing highly epitaxial film on sapphire, with a clean interface. Inset shows electron diffraction pattern across the interface.

Image of FIG. 3.
FIG. 3.

(Color online) Optical absorption spectra of films after annealing, showing the change in the absorption edge and the observation of Mn energy levels with increasing Mn concentration.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Magnetization as a function of applied magnetic field for thin films grown at a partial pressure of at . Inset (A) shows the same at . Inset (B) shows a close scan near the origin for at , showing a coercivity of . (b) Magnetization as a function of applied magnetic field for the annealed thin films at . Inset (A) shows the same at . Inset (B) shows a close scan near the origin for at , showing a coercivity of .

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/content/aip/journal/apl/88/24/10.1063/1.2213930
2006-06-12
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of oxygen annealing on Mn doped ZnO diluted magnetic semiconductors
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/24/10.1063/1.2213930
10.1063/1.2213930
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