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Observation of inversion behaviors induced by polarization effects in based metal-insulator-semiconductor structures
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10.1063/1.2213964
/content/aip/journal/apl/88/24/10.1063/1.2213964
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/24/10.1063/1.2213964
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical curves of and based MIS structures measured at . There is a distinctive hump at about in based MIS structure.

Image of FIG. 2.
FIG. 2.

Calculated band structure of heterostructure with various polarization-induced charges. The insert shows the hole well formed at the top heterointerface.

Image of FIG. 3.
FIG. 3.

Calculated band structure of heterostructure with various gate biases. The hole well is already above the Fermi level when the gate bias is . The polarization charge is assumed to be .

Image of FIG. 4.
FIG. 4.

Room-temperature curves of the based MIS structure measured at various frequencies between and .

Image of FIG. 5.
FIG. 5.

curves of the based MIS structure measured at 20, 50, and , respectively.

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/content/aip/journal/apl/88/24/10.1063/1.2213964
2006-06-12
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Observation of inversion behaviors induced by polarization effects in GaN∕AlxGa1−xN∕GaN based metal-insulator-semiconductor structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/24/10.1063/1.2213964
10.1063/1.2213964
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