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Nonvolatile memory prepared by current controlled oxidation of a Cu anode in LiTCNQ saturated acetonitrile
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10.1063/1.2213971
/content/aip/journal/apl/88/24/10.1063/1.2213971
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/24/10.1063/1.2213971
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Reaction mechanism of current controlled CuTCNQ growth (complexation of by ACN was omitted for clarity); SEM micrographs of CuTCNQ layer: (b) cross-section and (c) top views (after gentle scratching of CuTCNQ crystals with a tweezer tip).

Image of FIG. 2.
FIG. 2.

(Color online) characteristics of a CuTCNQ memory prepared by current controlled electrolysis. Ten successive cycles with . Scan direction is given by the arrows; the abscissa indicates the voltage across the device. Inset: on and off reading currents at .

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/content/aip/journal/apl/88/24/10.1063/1.2213971
2006-06-12
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nonvolatile Cu∕CuTCNQ∕Al memory prepared by current controlled oxidation of a Cu anode in LiTCNQ saturated acetonitrile
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/24/10.1063/1.2213971
10.1063/1.2213971
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