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Effect of lightly Si doping on the minority carrier diffusion length in -type GaN films
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10.1063/1.2213932
/content/aip/journal/apl/88/25/10.1063/1.2213932
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/25/10.1063/1.2213932

Figures

Image of FIG. 1.
FIG. 1.

The PV spectra of the undoped and lightly Si-doped GaN samples, where samples A and E are undoped and samples B, C, and D are lightly doped. The electron concentrations are , , , , and for samples A, B, C, D, and E, respectively.

Image of FIG. 2.
FIG. 2.

A plot of vs for the undoped GaN and lightly Si-doped GaN samples. The inset is a profile of vs for samples A and E. Whereas samples A and E are undoped, samples B, C, and D are lightly Si doped. The electron concentrations are , , , , and for samples A, B, C, D, and E, respectively.

Image of FIG. 3.
FIG. 3.

The dependence of the low momentum parameter on positron incident energy in the undoped GaN sample A and lightly Si-doped GaN samples B, C, and D. The electron concentrations are , , , and for samples A, B, C, and D, respectively.

Tables

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Table I.

Growth conditions and characterization parameters of the -type GaN samples.

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/content/aip/journal/apl/88/25/10.1063/1.2213932
2006-06-19
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/25/10.1063/1.2213932
10.1063/1.2213932
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