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Single silicon vacancy-oxygen complex defect and variable retention time phenomenon in dynamic random access memories
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10.1063/1.2213966
/content/aip/journal/apl/88/25/10.1063/1.2213966
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/25/10.1063/1.2213966
/content/aip/journal/apl/88/25/10.1063/1.2213966
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/content/aip/journal/apl/88/25/10.1063/1.2213966
2006-06-22
2014-11-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Single silicon vacancy-oxygen complex defect and variable retention time phenomenon in dynamic random access memories
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/25/10.1063/1.2213966
10.1063/1.2213966
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