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Hysteresis mechanism and reduction method in the bottom-contact pentacene thin-film transistors with cross-linked poly(vinyl alcohol) gate insulator
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10.1063/1.2213969
/content/aip/journal/apl/88/25/10.1063/1.2213969
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/25/10.1063/1.2213969
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical transfer curve of the OTFTs with of cross-linked PVA insulator. The severe hysteresis effect is observed.

Image of FIG. 2.
FIG. 2.

Transfer curves with the increasing sweep ranges. For each curve, the total sweep times are sustained equally by adjusting the number of voltage steps and time per each step. The hysteresis does not saturate as the sweep range is increased.

Image of FIG. 3.
FIG. 3.

(Color online) Measured curves for two virgin devices for the opposite sweep direction. (a) When is swept from positive to negative value, the transfer curve passes under the reference point by the effect of the positive accumulated gate bias stress during measurement. (b) But the transfer curve passes over the reference point by the negative gate bias stress when the sweep direction is reversed.

Image of FIG. 4.
FIG. 4.

Transfer curve of the OTFTs with a blocking oxide between gate and the cross-linked PVA insulator. For fair comparison with Fig. 1, the range and step are carefully determined in order to apply the same gate electric field to the PVA layer. The hysteresis effect is clearly reduced and the curve passes near the reference point.

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/content/aip/journal/apl/88/25/10.1063/1.2213969
2006-06-19
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hysteresis mechanism and reduction method in the bottom-contact pentacene thin-film transistors with cross-linked poly(vinyl alcohol) gate insulator
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/25/10.1063/1.2213969
10.1063/1.2213969
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