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Ni–Al diffusion barrier layer for integrating ferroelectric capacitors on Si
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10.1063/1.2214142
/content/aip/journal/apl/88/25/10.1063/1.2214142
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/25/10.1063/1.2214142
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD spectrum of the LSCO/PZT/LSCO/ heterostructure.

Image of FIG. 2.
FIG. 2.

(a) Cross-sectional structure of the LSCO/PZT/LSCO/ under transmission electron microscope (TEM). The corresponding SAED patterns are shown in the inset. (b)–(d) present interfaces from various layers under high-resolution TEM. No chemical reaction or interdiffusion between different layers was observed.

Image of FIG. 3.
FIG. 3.

A typical hysteresis loop of the LSCO/PZT/LSCO capacitors integrated on . The insets show the switchable polarization as a function of applied voltage (left, top) and hysteresis loop of the LSCO/PZT/LSCO capacitor integrated on (right, bottom).

Image of FIG. 4.
FIG. 4.

Fatigue characteristic of the LSCO/PZT/LSCO capacitor as a function of switching cycles.

Image of FIG. 5.
FIG. 5.

Polarization of the LSCO/PZT/LSCO capacitor as a function of retention time.

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/content/aip/journal/apl/88/25/10.1063/1.2214142
2006-06-21
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ni–Al diffusion barrier layer for integrating ferroelectric capacitors on Si
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/25/10.1063/1.2214142
10.1063/1.2214142
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