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Effect of point defect and Mn concentration in time-resolved differential reflection in GaMnAs
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10.1063/1.2216108
/content/aip/journal/apl/88/26/10.1063/1.2216108
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/26/10.1063/1.2216108
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Transmission spectra of GaMnAs and low-temperature grown GaAs (LT GaAs) at (a) and (b).

Image of FIG. 2.
FIG. 2.

Time-resolved differential reflectivity at for GaMnAs samples (A, B, and C) with several pump-probe wavelengths. Insets on the left (right) hand side show in semi-insulating (low-temperature grown) GaAs at room temperature. data from LT GaAs show sign reversal between 850 and . This indicates that more than one defect levels are involved.

Image of FIG. 3.
FIG. 3.

Differential reflectivity at as a function of delay time for GaMnAs samples (A, B, and C) with several wavelengths. Insets on the left (right) hand side show in semi-insulating (low-temperature grown) GaAs at .

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/content/aip/journal/apl/88/26/10.1063/1.2216108
2006-06-26
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of point defect and Mn concentration in time-resolved differential reflection in GaMnAs
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/26/10.1063/1.2216108
10.1063/1.2216108
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