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Apparatus schematic showing the probe and electronics. Inset: the lumped element scheme for the tip capacitance in the case of a low- film with arbitrary backing.
Optical photograph of the region on a wafer with OCD test keys. Site A is a open area with a -thick low- film backed by a continuous Cu patch. Sites B are open areas with the low- film backed by patterned Cu lines with variable pitch and density.
“Apparent” film dielectric constant vs normalized position across the edge of a Cu patch located at and buried under a low- film with pristine (site A, Fig. 2); solid line is a guide to the eye. Tip size .
“Apparent” film dielectric constant vs pitch of the backing formed by Cu lines embedded into low- material for three Cu pattern densities (sites B, Fig. 2); solid lines are guides to the eye.
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