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Noncontact electrical metrology of Cu/low- interconnect for semiconductor production wafers
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View: Figures


Image of FIG. 1.
FIG. 1.

Apparatus schematic showing the probe and electronics. Inset: the lumped element scheme for the tip capacitance in the case of a low- film with arbitrary backing.

Image of FIG. 2.
FIG. 2.

Optical photograph of the region on a wafer with OCD test keys. Site A is a open area with a -thick low- film backed by a continuous Cu patch. Sites B are open areas with the low- film backed by patterned Cu lines with variable pitch and density.

Image of FIG. 3.
FIG. 3.

“Apparent” film dielectric constant vs normalized position across the edge of a Cu patch located at and buried under a low- film with pristine (site A, Fig. 2); solid line is a guide to the eye. Tip size .

Image of FIG. 4.
FIG. 4.

“Apparent” film dielectric constant vs pitch of the backing formed by Cu lines embedded into low- material for three Cu pattern densities (sites B, Fig. 2); solid lines are guides to the eye.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Noncontact electrical metrology of Cu/low-k interconnect for semiconductor production wafers