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-type behavior in nominally undoped ZnO thin films by oxygen plasma growth
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10.1063/1.2217165
/content/aip/journal/apl/88/26/10.1063/1.2217165
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/26/10.1063/1.2217165

Figures

Image of FIG. 1.
FIG. 1.

The variation of Hall voltage as a function of magnetic intensity for the -type ZnO thin film grown at .

Image of FIG. 2.
FIG. 2.

characteristics of ZnO homojunction measured at room temperature. The inset shows characteristics of alloy contacts on the ZnO thin films.

Image of FIG. 3.
FIG. 3.

SIMS depth profile of double-layer-structured ZnO homojunction.

Image of FIG. 4.
FIG. 4.

(a) PL spectrum for the -type ZnO thin film grown at . The inset shows Gaussian fitting to the near-band-edge emission peak. (b) Temperature-dependent peak positions and their fitting curves for bands , , and in (a).

Tables

Generic image for table
Table I.

Electrical properties of nominally undoped ZnO thin films grown at different substrate temperatures.

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/content/aip/journal/apl/88/26/10.1063/1.2217165
2006-06-28
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: p-type behavior in nominally undoped ZnO thin films by oxygen plasma growth
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/26/10.1063/1.2217165
10.1063/1.2217165
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