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Low power scaling using parallel coupling for toggle magnetic random access memory
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10.1063/1.2217236
/content/aip/journal/apl/88/26/10.1063/1.2217236
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/26/10.1063/1.2217236
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Swept-field and toggle data for three samples, with top pinned layer thickness increasing by from (a) to (b) to (c). Kerr rotation (top row) is plotted with larger field scale than easy axis CAFM swept-field data (middle row) to illustrate saturation behavior. Toggle data (bottom row) is plotted vs toggle box field size, which corresponds to swept-field amplitude divided by .

Image of FIG. 2.
FIG. 2.

Schematic diagram illustrating the contributions to offset field acting on the free layers and also the source of imbalance in these offset fields acting on each of the two free layers.

Image of FIG. 3.
FIG. 3.

Direct write, toggle start, and toggle stop fields, expressed as box field amplitude (in positive and negative field directions), as functions of the Cu free layer spacer thickness. The Cu spacer provided monotonically increasing parallel exchange coupling in the range of for the range of Cu thickness tested. Inset: Toggling behavior of typical junction with spacer thickness, giving exchange-coupling strength. Toggling starts at 50 and (corresponding to the spin-flop field) and stops at 130 and (corresponding to the saturation field).

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/content/aip/journal/apl/88/26/10.1063/1.2217236
2006-06-29
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low power scaling using parallel coupling for toggle magnetic random access memory
http://aip.metastore.ingenta.com/content/aip/journal/apl/88/26/10.1063/1.2217236
10.1063/1.2217236
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